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| RF501B2S Diodes Fast recovery diode (Silicon epitaxial planer) RF501B2S Applications General rectification External dimensions (Unit : mm) 6.50.2 5.10.2 0.1 Land size figure 6.0 2.30.2 0.1 0.50.1 Features 1) Power mold type (CPD) 2) High reliability 3) Low VF 4) Very fast recovery 5) Low switching loss C0.5 1.50.3 5.50.3 0.1 1.5 2.5 9.50.6 0.75 0.9 1 2 3 0.650.1 CPD 2.3 2.3 0.50.1 1.00.2 Structure 2.30.2 2.30.2 Construction Silicon epitaxial planer ROHM : CPD JEITA : SC-63 Manufacture Date Taping dimensions (Unit : mm) 4.00.1 2.00.05 8.00.1 1.550.1 0 2.50.1 0.40.1 7.50.05 10.10.1 6.80.1 8.00.1 3.00.1 00.5 13.50.2 10.10.1 TL 16.00.2 Absolute maximum ratings (Ta=25C) Parameter Limits Symbol VRM Reverse voltage (repetitive peak) 200 VR Reverse voltage (DC) 200 Average rectified forward current (*1) 5 Io IFSM Forward current surge peak 60Hz1cyc 40 Junction temperature 150 Tj Storage temperature -55 to +150 Tstg (*1) Business frequencies, Rating of R-load, 1/2 lo per diode, TC=180 Electrical characteristic (Ta=25C) Parameter Forward voltage Reverse current Reverse recovery time Symbol VF IR Min. Typ. 0.86 0.015 15 Max. 0.92 1 30 Unit V A ns Unit V V A A Conditions IF=5A VR=200V IF=0.5A,IR=1A,Irr=0.25*IR trr Rev.B 3.0 2.0 2.70.2 1.6 1.6 6.0 1/3 RF501B2S Diodes Electrical characteristic curves 10 Ta=150 10000 Ta=150 Ta=125 1000 f=1MHz REVERSE CURRENT:IR(nA) FORWARD CURRENT:IF(A) 1 Ta=125 0.1 Ta=75 Ta=25 Ta=-25 0.01 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 1000 Ta=75 100 100 Ta=25 10 Ta=-25 1 10 0.001 0 100 200 300 400 500 600 700 800 900 100 0 0.1 0 50 100 150 REVERSE VOLTAGEVR(V) VR-IR CHARACTERISTICS 200 1 0 10 20 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 30 FORWARD VOLTAGEVF(mV) VF-IF CHARACTERISTICS 100 Ta=25 Ta=25 IF=3A IF=5A n=30pcs n=30pcs 90 890 200 Ta=25 Ta=25 VR=200V VR=200 n=30pcs V n=30pcs Ta=25 f=1MHz VR=0V n=10pcs FORWARD VOLTAGE:VF(mV) REVERSE CURRENT:IR(nA) 70 60 50 40 30 20 10 AVE:10.7nA AVE:4.60nA CAPACITANCE BETWEEN TERMINALS:Ct(pF) 880 80 190 870 180 860 AVE:859.4mV 850 AVE:856.6mV 170 AVE:174.9pF 160 840 VF DISPERSION MAP 0 IR DISPERSION MAP 150 Ct DISPERSION MAP 300 30 1000 RESERVE RECOVERY TIME:trr(ns) PEAK SURGE FORWARD CURRENT:IFSM(A) 25 20 15 10 5 0 AVE:14.5ns PEAK SURGE FORWARD CURRENT:IFSM(A) 250 200 150 Ifsm 1cyc 8.3ms Ta=25 IF=0.5A IR=1A Irr=0.25*IR n=10pcs Ifsm 8.3ms 8.3ms 100 1cyc AVE:167.0A 100 50 0 IFSM DISRESION MAP 10 1 trr DISPERSION MAP 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 1000 100 Mounted on epoxy board 10 Rth(j-a) DC D=1/2 Sin(180) 4 PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm t TRANSIENT THAERMAL IMPEDANCE:Rth (/W) 8 10 Rth(j-c) 1 IM=100mA IF=1A FORWARD POWER DISSIPATION:Pf(W) 6 100 1ms time 2 300us 10 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 0.1 0.001 0 TIME:t(s) Rth-t CHARACTERISTICS 0.1 10 1000 0 2 4 6 8 10 AVERAGE RECTIFIED FORWARD CURRENTIo(A) Io-Pf CHARACTERISTICS Rev.B 2/3 RF501B2S Diodes 0A 0V t DC Io VR D=t/T VR=100V T Tj=150 30 No break at 30kV 25 20 15 10 5 0 0 25 50 75 100 125 150 CASE TEMPARATURE:Tc() Derating Curve(Io-Tc) C=200pF R=0 C=100pF R=1.5k No break at 30kV 10 0A 0V DC t T D=1/2 Io VR D=t/T VR=100V Tj=150 10 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) D=1/2 6 6 4 4 Sin(180) 2 Sin(180) 2 0 0 25 50 75 100 125 150 0 AMBIENT TEMPERATURE:Ta() Derating Curve(Io-Ta) ELECTROSTATIC DISCHARGE TEST ESD(KV) 8 8 ESD DISPERSION MAP Rev.B 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1 |
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